Elektor 90s The Audio HiFi Circuits Collection20251119

INSULATED GATE BIPOLAR TRANSISTORS (IGBTs) By our Editorial Staff An IGBT conaists of a heavily boron-doped | COLLECTOR cer substrate(p+), which is fiised on to the collector, ©) (e) on whicha phosphorus-doped n-eptiaxial layer | is deposited. The gate and emitter are epitax- ux ft = ux fh —_ | fas Gate Bipolar Transistors are iallayersformed by a high-resdutionn-channel “x (IK) (@}— ([@ eing used more and more widely. M od- DMOs proces. Since the transistor therefore ~ _— ™ | ern drive system engineering would not be obtainsann-p-n-pstructure, like a silicon-con- À © the without these devices. trolled rectifier(SCR),ap+ diffusion layer is aOR EMITTEN 1GB Tsareidealty suited io applicatinswhere inserted into the centre of the device. This high voltagescoupled with highcurrentsmust layer reduces the current amplification of the. "D. "© beswitched. They are foundin voltage converters, up

ga INSULATED GATE BIPOLAR TRANSISTORS (IGBTs) By our Editorial Staff An IGBT conaists of a heavily boron-doped | COLLECTOR cer substrate(p+ ), which is fiised on to the collector, ©) (e) on whicha phosphorus-doped n-eptiaxial layer | is deposited. The gate and emitter are epitax- ux ft = ux fh —_ | fas Gate Bipolar Transistors are iallayersformed by a high-resdutionn-channel “x (IK) (@}— ([@ eing used more and more widely. M od- DMOs proces. Since the transistor therefore ~ _— ™ | ern drive system engineering would not be obtainsann-p-n-pstructure, like a silicon-con- À © the without these devices. trolled rectifier(SCR),ap+ diffusion layer is aOR EMITTEN 1GB Tsareidealty suited io applicatinswhere inserted into the centre of the device. This high voltagescoupled with highcurrentsmust layer reduces the current amplification of the . "D. "© beswitched. They are foundin voltage converters, uppern-p-ntransistor and prevents any latch- T T plifiers The first projectthatusedIGBTswas cut off at high currents owing to the break- |. | ™y aage ail n (1-to-3 phase converter] . À separate p-base region permits inde pen- | | + ~ + Noteworthy properties of IGHTs are the dent control of the…